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| Preliminary SGA-0163 Product Description The SGA-0163 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Small Signal Gain vs. Frequency 15 SGA-0163Z Pb RoHS Compliant & Green Package Preliminary DC-4500 MHz, Silicon Germanium Cascadeable Gain Block Product Features * Now available in Lead Free, RoHS Compliant, & Green Packaging * DC-4500 MHz Operation * Single Voltage Supply * Low Current Draw: 8mA at 2.1V typ. * High Output Intercept: 10 dBm typ. at 1900 MHz 10 Applications * * * * 0 1 2 3 4 5 6 5 PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite dB 0 Frequency GHz Symbol P1dB Parameter Output Pow er at 1dB Compression Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz Units dBm dBm dBm dBm dBm dBm dB dB dB MHz Min. Typ. -1.8 -1.8 -2.4 9.4 9.8 9.2 12.7 12.0 11.6 4500 1.6:1 1.3:1 17.6 18.1 18.3 4.6 2.1 Max. IP3 Third Order Intercept Point S21 BW3dB VSWRIN VSWROUT S12 NF VD ID RTH, j-l Small Signal Gain 3dB Bandw idth Input VSWR Output VSWR Reverse Isolation Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction - lead) DC - 4500MHz DC - 4500MHz 850 MHz 1950 MHz 2400 MHz 1950 MHz dB dB dB dB V mA C/W 6 8 255 10 Test Conditions: VS = 5 V RBIAS = 360 Ohms ID = 5 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = -17 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101494 Rev D Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Preliminary Key parameters, at typical operating frequencies: Parameter 100 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 850 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 3500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Typical 25C Test Condition Unit dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dBm dBm dB dB (ID = 8mA, unless otherwise noted) 12.9 9.4 -1.5 12.5 17.3 4.6 12.8 9.5 -1.5 12.7 17.4 4.6 12.7 9.4 -1.8 12.8 17.6 4.7 12.0 9.8 -1.8 12.4 18.1 4.6 11.6 9.2 -2.5 12.1 18.3 10.6 9.3 -2.7 11.8 18.5 Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Tone spacing = 1 MHz, Pout per tone = -17dBm Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 16 mA 6V -4 dBm +150C -40C to +85C +150C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l 303 Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101494 Rev D Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Preliminary 20 S21 vs. Temperature, ID = 8mA 25C -40C 85C 0 S12 vs. Temperature, ID = 8mA 25C -40C 85C 15 -10 dB 10 dB -20 -30 0 1 2 3 4 5 6 0 1 2 3 4 5 6 5 0 GHz GHz 0 -5 S11 vs. Temperature, ID = 8mA 25C -40C 85C 0 S22 vs. Temperature, ID = 8mA 25C -40C 85C -10 dB dB 0 1 2 3 4 5 6 -10 -15 -20 -25 -20 -30 -40 0 1 2 3 4 5 6 GHz GHz 15 IP3 vs. Temperature, ID = 8mA 0 -2 P1dB vs. Temperature, ID = 8mA dBm 10 dBm 5 25C -40C 85C 0 1 2 3 4 -4 -6 -8 25C -40C 85C 0 1 2 3 4 0 -10 GHz GHz 303 Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101494 Rev D Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Preliminary Basic Application Circuit R BIAS Application Circuit Element Values Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 VS 1 uF 1000 pF CD LC 1,2 CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 3 SGA-0163 6 4,5 CB RF out Recommended Bias Resistor Values for ID=8mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 5V 360 7.5 V 680 9V 820 12 V 1.2K VS RBIAS 1 uF 1000 pF Note: RBIAS provides DC bias stability over temperature. CD LC G45 Mounting Instructions 1. Use a large ground pad area near device pins 1, 2, 4, and 5 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. CB CB Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Part Identification Marking 3 654 654 G45 1, 2, 4, 5 GND G45 123 G5Z 6 123 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Reel Size Devices/Reel SGA-0163 SGA-0163Z 7" 7" 3000 3000 303 Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101494 Rev D Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier SOT-363 PCB Pad Layout Preliminary Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. SOT-363 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101494 Rev D |
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